Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on […]
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs)
Teledyne e2v HiRel expands company’s portfolio of space-screened GaN HEMTs
Teledyne e2v HiRel has added new, space screened versions of the company’s popular 100 V, 90 A and 650 V, 30 A high reliability gallium nitride high electron mobility transistors […]