Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on […]
Gallium Nitride (GaN)
Industry’s 1st space-grade 200V GaN FET gate driver debuts from Texas Instruments
Texas Instruments (TI) has announced a new family of radiation-hardened and radiation-tolerant, half-bridge, gallium nitride (GaN) field-effect transistor (FET) gate drivers—this family of gate drivers includes the industry’s first space-grade, […]
A new generation of high power GaN SSPAs from Celestia TTi
Celestia TTi has introduced a new generation of high power, high performance GaN SSPAs. Specialists in RF, antennas and ground stations with a track record spanning almost 30 years, Celestia […]
Celestia TTi brings GaN based SSPAs in DBS band to broadcast SATCOM
Celestia TTi has developed a line-up of high power SSPAs that rely on the latest solid state Gallium Nitride (GaN) technology to deliver solutions to broadcast SATCOM. By using advanced […]